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High-speed, non-destructive, high-accuracy measurement of thin film thickness & refractive index at high resolution is now possible.
We support quality management and process control with unprecedented data volume and software functionalities adaptable to your needs.
High-speed mapping ellipsometer that can measure the entire surface of φ8 “wafers” that can measure surface thicknesses of 1 nm or less at high speed and high density.
Furthermore, it supports various film thickness distribution measurements such as micro area measurement and transparent substrate support.
High-speed
High-speed evaluation of full area wafers (up to 12 inch).
Using an unprecedented amount of data, you can provide feedback to your troubleshooting process and bring your quality control to a new level.
・Thickness measurement upgraded from “point” to full-fledged “surface” evaluation
・Whole surface evaluation provides great insights for process evaluation
High-resolution
ME-210(-T)
In addition to its large surface measurement capabilities of wafers up to 12 inches, the ME-210(-T) provides a high-resolution mode, allowing zooming into areas as small as a few micrometers.
Measurement area size: up to 12 inches (standard: 8 inches)
Spot size:
Standard mode ： □ 0.55 mm
Intermediate mode： □ 55μm
High-resolution mode: □ 5.5μm
Thin film of transparent substrate measurements available
With ME-210-T, we made possible the evaluation of objects that are usually too difficult to evaluate using standard ellipsometric techniques, such as organic thin films for OLED, etc.
| 重复精度 | 薄膜厚度：0.1nm 折射率：0.001 *Si 上的 SiO2 膜（厚度约 100nm）的一点重复测量 100 次时的标准偏差值 |
| 测量速度 | 900 点/分钟以上（广域模式 100mm 方形区域测量） 5000 点/分钟或以上（高清模式 1mm 方形区域测量） |
| 光源 | 半导体激光器（波长 636nm） |
| 测量点 | 广域模式：0.5mm 高清模式：5.5μm |
| 入射角度 | 70 度 |
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